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Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs
Title Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs Author Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Co-authors Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Vincze A. Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV ORCID Donoval D. Tomáška M. Kostič Ivan 1955- SAVINFO - Ústav informatiky SAV SCOPUS RID ORCID Source document Microelectronic Engineering. Vol. 88, (2011), p. 166-169 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations KETTENISS, N. - BEHMENBURG, H. - HAHN, H. - NOCULAK, A. - HOLLAENDER, B. - KALISCH, H. - HEUKEN, M. - VESCAN, A. Quaternary Enhancement-Mode HFET With In Situ SiN Passivation. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, 2012, vol. 33, no. 4, pp. 519-521. BISI, D. - MENEGHINI, M. - STOCCO, A. - CIBIN, G. - PANTELLINI, A. - NANNI, A. - LANZIERI, C. - ZANONI, E. - MENEGHESSO, G. Influence of Fluorine-based Dry Etching on Electrical Parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. In 2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC). ISSN 1930-8876, 2013, vol., no., pp. 61-64. LOGHMANY, Alireza - VALIZADEH, Pouya. Alternative isolation-feature geometries and polarization-engineering of polar AlGaN/GaN HFETs. In SOLID-STATE ELECTRONICS. ISSN 0038-1101, 2015, vol. 103, no., pp. 162-166. HE, Yunlong - MI, Minhan - ZHANG, Meng - WANG, Chong - MA, Xiaohua - HAO, Yue. Influence of Thermal Annealing on AlGaN/GaN HEMT by Fluorine Plasma Treatment. In 2016 13TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2016, vol., no., pp. 116-119. FORNASIERO, Q. - DEFRANCE, N. - LESECQ, M. - FRAYSSINET, E. - CORDIER, Y. - CHEVALIER, F. - IDIR, N. - DE JAEGER, J.C. Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes. In 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (Wocsdice Exmatec 2021). 2021, pp. 50-52. HAL Id:l-03275589. MAUDUIT, Clément - TLEMCANI, Taoufik Slimani - ZHANG, Meiling - YVON, Arnaud - VIVET, Nicolas - CHARLES, Matthew - GWOZIECKI, Romain - ALQUIER, Daniel. Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN. In Microelectronic Engineering, 2023-05-15, 277, pp. ISSN 01679317. Dostupné na: https://doi.org/10.1016/j.mee.2023.112020. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2011 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/j.mee.2010.10.005 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2011 2010 1.575 Q2 0.934 Q1
Number of the records: 1