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Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

  1. TitleTransport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
    Author Donoval D.
    Co-authors Chvála A.

    Šramatý R.

    Kováč Ján

    Morvan E.

    Dua C.

    di Forte Poisson M.A.

    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

    Source document Journal of Applied Physics. Vol. 109, (2011), 063711
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsXIE, S. - FENG, Z.H. - ZHANG, S.L. - LIU, B. - MAO, L.H. In 2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC). 2011.
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    BOBBY, A. - VERMA, S. - ASOKAN, K. - SARUN, P.M. - ANTONY, B.K. In PHYSICA B-CONDENSED MATTER. DEC 15 2013, vol. 431, p. 6-10.
    WU, M. - ZHENG, D.Y. - WANG, Y. - CHEN, W.W. - ZHANG, K. - MA, X.H. - ZHANG, J.C. - HAO, Y. In CHINESE PHYSICS B. SEP 2014, vol. 23, no. 9.
    BOBBY, A. - SHIWAKOTI, N. - VERMA, S. - GUPTA, P.S. - ANTONY, B.K. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. MAY 2014, vol. 21, p. 116-121.
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    KOTANI, J. - YAMADA, A. - ISHIGURO, T. - TOMABECHI, S. - NAKAMURA, N. In APPLIED PHYSICS LETTERS. APR 11 2016, vol. 108, no. 15.
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    CYWINSKI, G. - SZKUDLAREK, K. - KRUSZEWSKI, P. - YAHNIUK, I. - YATSUNENKO, S. - MUZIOL, G. - SKIERBISZEWSKI, C. - KNAP, W. - RUMYANTSEV, S.L. In APPLIED PHYSICS LETTERS. JUL 18 2016, vol. 109, no. 3.
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    KOTANI, J. - YAMADA, A. - ISHIGURO, T. - YAMAGUCHI, H. - NAKAMURA, N. In JOURNAL OF APPLIED PHYSICS. MAR 21 2017, vol. 121, no. 11.
    BOURLIER, Y. - BOUTTEMY, M. - PATARD, O. - GAMARRA, P. - PIOTROWICZ, S. - VIGNERON, J. - AUBRY, R. - DELAGE, S. - ETCHEBERRY, A. Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2018, vol. 7, no. 6, p. P329-P338.
    SADOUN, A. - HIMA, A. - MANSOURI, S. - BENAMARA, Z. - CHELLALI, M. The effect of introduction of HfO2 on the electrical characterization of the Pt/ HfO2 / n-GaN. In 2018 INTERNATIONAL CONFERENCE ON COMMUNICATIONS AND ELECTRICAL ENGINEERING (ICCEE). 2018, p. 86-+.
    KIM, H. - SONG, K.M. Dislocation-Related Electron Transport in Au Schottky Junctions on AlGaN/GaN'. In TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS. APR 2018, vol. 19, no. 2, p. 101-105.
    KUMAR, S. - MALIK, A. - RAWAL, D.S. - VINAYAK, S. - MALIK, H.K. Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques. In DEFENCE SCIENCE JOURNAL. NOV 2018, vol. 68, no. 6, p. 572-576.
    OSVALD, J. - LALINSKY, T. - VANKO, G. High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes. In APPLIED SURFACE SCIENCE. DEC 15 2018, vol. 461, SI, p. 206-211.
    SADOUN, A. - MANSOURI, S. - CHELLALI, M. - HIMA, A. - BENAMARA, Z. The effect of introduction of HfO2 on the electrical characterization of the Pt/HfOinf2/inf/n-GaN. In Proceedings International Conference on Communications and Electrical Engineering, ICCEE 2018, 2019-02-04, pp.
    RANADE, Ajinkya K. - MAHYAVANSHI, Rakesh D. - DESAI, Pradeep - KATO, Masashi - TANEMURA, Masaki - KALITA, Golap. Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction. In Applied Physics Letters. ISSN 00036951, 2019-04-15, 114, 15, pp.
    ASHERY, A. - SHABAN, H. - GAD, S.A. - MANSOUR, B.A. Investigation of electrical and capacitance- voltage characteristics of GO/TiO2/n-Si MOS device. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, AUG 1 2020, vol. 114.
    CUI, P. - ZHANG, J. - YANG, T.Y. - CHEN, H. - ZHAO, H.C. - LIN, G.Y. - WEI, L.C. - XIAO, J.Q. - CHUEH, Y.L. - ZENG, Y.P. Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, FEB 6 2020, vol. 53, no. 6.
    KIM, H. - CHOI, S. - CHOI, B.J. Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition. In COATINGS. FEB 2020, vol. 10, no. 2.
    JANG, Junho - SONG, Jaeman - LEE, Seung S. - JEONG, Sangkwon - LEE, Bong Jae - KIM, Sanghyeon. Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, 2021, vol. 131, no., pp. Dostupné na: https://doi.org/10.1016/j.mssp.2021.105882.
    JANG, Junho - GEUM, Dae-Myeong - KIM, SangHyeon. Broadband Au/n-GaSb Schottky photodetector array with a spectral range from 300 nm to 1700nm. In OPTICS EXPRESS. ISSN 1094-4087, 2021, vol. 29, no. 23, pp. 38894-38903. Dostupné na: https://doi.org/10.1364/OE.443094.
    SHABAN, H. - MAHDY, M.A. - MOUSTAFA, S.H. - EL ZAWAWI, I.K. Influence of substrate temperature on the structural, optical properties, and I-V characteristics of n-AgInSe2/p-Si heterojunctions. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. ISSN 0921-5107, DEC 2023, vol. 298. Dostupné na: https://doi.org/10.1016/j.mseb.2023.116853.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2011
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1063/1.3560919
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201120102.079Q21.484Q1
Number of the records: 1  

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