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Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes

  1. TitleInfluence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes
    Author Arroval T.
    Co-authors Aarik L.

    Rammula R.

    Mändar H.

    Aarik J.

    Hudec Boris SAVELEK - Elektrotechnický ústav SAV    ORCID

    Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV

    Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Source document Physica Status Solidi A : applications and materials science. Vol. 211, (2014), p. 425-432
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsJEON, W. - YOO, S. - KIM, H.K. - LEE, W. - AN, C. H. - CHUNG, M. J. - CHO, C. J. - KIM, S. K. - HWANG, C. S. In ACS APPLIED MATERIALS & INTERFACES. DEC 20 2014, vol. 6, no. 23, p. 21632-21637.
    PESSOA, R. S. - PEREIRA, F. P. - TESTONI, G. E. - CHIAPPIM, W. - MACIEL, H. S. - SANTOS, L. V. In 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro). 2014.
    CHAKER, A. - SZKUTNIK, P.D. - POINTET, J. - GONON, P. - VALLEE, C. - BSIESY, A. In JOURNAL OF APPLIED PHYSICS. AUG 28 2016, vol. 120, no. 8.
    NIEMELA, J.P. - MARIN, G. - KARPPINEN, M. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. SEP 2017, vol. 32, no. 9.
    KIM, S.H. - LEE, W. - AN, C.H. - KWON, D.S. - KIM, D.G. - CHA, S.H. - CHO, S.T. - HWANG, C.S. Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications. In ACS APPLIED MATERIALS & INTERFACES. DEC 5 2018, vol. 10, no. 48, p. 41544-41551.
    Cianci, E., Spiga, S.: MOx materials by ALD method In Metal Oxides for Non-volatile Memory: Materials, Technology and Applications. Elsevier 2022, pp. 169-199. ISBN: 978-0-12-814629-3
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2014
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1002/pssa.201330086
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201420131.525Q20.772Q1
Number of the records: 1  

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