The influence of technology and switching parameters on resistive switching behavious of Pt/HfO2/TiN MIM structures

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Title	The influence of technology and switching parameters on resistive switching behavious of Pt/HfO2/TiN MIM structures
Author	Paskaleva A.
Co-authors	Hudec Boris SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Jančovič Peter 1990 SAVELEK - Elektrotechnický ústav SAV
	Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Spassov D.

Source document	Facta universitatis : series: Electronics and Energetics. Vol. 27, (2014), p. 621-630
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	ATTARIMASHALKOUBEH, H. - LEBLEHICI, Y. In-depth Structure and Electrical Characteristics Study of HfOx-based Resistive Random Access Memories (ReRAMs). In 2019 IEEE 31ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL 2019). ISSN 2159-1660, 2019, p. 79-82.
Category	ADEB - Scientific papers in other foreign journals not registered in Current Contents Connect without IF (non-impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2014

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	N

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2014

Number of the records: 1