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Characteristics of silicon carbide detectors
Title Characteristics of silicon carbide detectors Author Gurov J.B. Co-authors Rozov S.V. Sandukovskij V.G. Yakushev E.A. Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Instruments and Experimental Techniques. Vol. 58, (2015), p. 22-24 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations SCIUTO, A. - TORRISI, L. - CANNAVO, A. - MAZZILLO, M. - CALCAGNO, L. In JOURNAL OF ELECTRONIC MATERIALS. NOV 2017, vol. 46, no. 11, p. 6403-6410. TORRISI, L. - SCIUTO, A. - CANNAVO, A. - DI FRANCO, S. - MAZZILLO, M. - BADALA, P. - CALCAGNO, L. In JOURNAL OF ELECTRONIC MATERIALS. JUL 2017, vol. 46, no. 7, p. 4242-4249. REJHON, Martin - BRYNZA, Mykola - GRILL, Roman - BELAS, Eduard - KUNC, Jan. Investigation of deep levels in semi-insulating vanadium-doped 4H-SiC by photocurrent spectroscopy. In PHYSICS LETTERS A, 2021, vol. 405, no., pp. ISSN 0375-9601. Dostupné na: https://doi.org/10.1016/j.physleta.2021.127433. FU, W.T. - WANG, L.N. - WANG, B. - CHU, X. - XUN, T. - YANG, H.W. Investigation on the photocurrent tail of vanadium-compensated 4H-SiC for microwave application. In AIP ADVANCES. SEP 1 2022, vol. 12, no. 9. Dostupné na: https://doi.org/10.1063/5.0111585. Category ADMA - Scientific papers in foreign impacted journals registered in Web of Sciences or Scopus Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2015 Registered in WOS Registered in SCOPUS DOI 10.1134/S0020441215010054 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore N rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2015 2014 0.331 Q4 0.254 Q3
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