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Lanthanide-doped LaSi3N5 phosphors: Ab initio study of electronic structures, band gaps and energy level locations
Title Lanthanide-doped LaSi3N5 phosphors: Ab initio study of electronic structures, band gaps and energy level locations Author Lenčéš Zoltán 1965 SAVANOCH - Ústav anorganickej chémie SAV ORCID Co-authors Ibrahim Ismail 1985 Benco Ľubomír Šajgalík Pavol 1955 SAVANOCH - Ústav anorganickej chémie SAV RID ORCID Source document ISASC 2016. 4th international symposium on new frontier of advanced Si-based ceramics and composites, september 25-28, 2016, Haeundae Grand Hotel, Busan, Korea : abstract book. P. 132. - Korea : The Korean Ceramic Society, 2016 ; ISASC 2016. International Symposium on New Frontier of Advanced Si-Based Ceramics and Composites Language eng - English Document kind rozpis článkov z periodík (rzb) Category GII - Other publications and documents which is not possible to categorize into classes/categories mentioned above 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2016
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