Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Number of the records: 1

Title	Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
Author	Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Co-authors	Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV
	Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Vančo L.
	Veselý M.
	Bouazzaoui F.
	Chauvat M.-P.
	Ruterana P.
	Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ^ORCID

Source document	Applied Physics Express. Vol. 12 (2019), no. 014001
Language	eng - English
URL	URL link
Document kind	rozpis článkov z periodík (rbx)
Citations	MURUGAPANDIYAN, P. - MOHANBABU, A. - LAKSHMI, V.R. - WASIM, M. - SUNDARAM, K.M. Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications. In JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, JAN 2020, vol. 49, no. 1, SI, p. 524-529.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2019
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.7567/1882-0786/aaef41

article

	File name	Access	Size	Downloaded	Type	License
	Generation of hole gas in non-inverted InAl.pdf	Neprístupný/archív	605.7 KB	0	Publisher's version

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2019	2018	2.772	Q2	0.924	Q1

Number of the records: 1