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Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Title Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation Author Asubar J.T. Co-authors Yatabe Z. Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Hashizume T. Source document Journal of Applied Physics. Vol. 129 (2021), no. 121102 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations SHI, Wen - JIANG, Qimeng - LUAN, Tiantian - HUANG, Sen - WANG, Xinhua - GUO, Fuqiang - YAO, Yixu - DENG, Kexin - BI, Lan - FAN, Jie - YIN, Haibo - WEI, Ke - XIONG, Wenjuan - LI, Yankui - JIANG, Haojie - LI, Junfeng - LIU, Xinyu. Implementation of RTCVD-SiNx Gate Dielectric Into Enhancement-Mode GaN MIS-HEMTs Fabricated on Ultrathin-Barrier AlGaN/GaN-on-Si Platform. In IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, vol. 68, no. 9, pp. 4274-4277. ISSN 0018-9383. Dostupné na: https://doi.org/10.1109/TED.2021.3088771. HIRAI, Hirohisa - MIURA, Yoshinao - NAKAJIMA, Akira - HARADA, Shinsuke - YAMAGUCHI, Hiroshi. Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors. In APPLIED PHYSICS LETTERS, 2021, vol. 119, no. 7, pp. ISSN 0003-6951. Dostupné na: https://doi.org/10.1063/5.0060415. NGUYEN, Duong Dai - ISODA, Takehiro - DENG, Yuchen - SUZUKI, Toshi-kazu. Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 130, no. 1, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0054045. NABATAME, Toshihide - MAEDA, Erika - INOUE, Mari - HIROSE, Masafumi - OCHI, Ryota - SAWADA, Tomomi - IROKAWA, Yoshihiro - HASHIZUME, Tamotsu - SHIOZAKI, Koji - ONAYA, Takashi - TSUKAGOSHI, Kazuhito - KOIDE, Yasuo. Study of HfO 2-Based High-k Gate Insulators for GaN Power Device. In ECS Transactions, 2021-01-01, 104, 4, pp. 113-120. ISSN 19386737. Dostupné na: https://doi.org/10.1149/10404.0113ecst. HUANG, C.Y. - MAZUMDER, S. - LIN, P.C. - LEE, K.W. - WANG, Y.H. Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics. In MATERIALS. OCT 2022, vol. 15, no. 19. Dostupné na: https://doi.org/10.3390/ma15196895. UENUMA, M. - KUWAHARADA, S. - TOMITA, H. - TANAKA, M. - SUN, Z.X. - HASHIMOTO, Y. - FUJII, M.N. - MATSUSHITA, T. - URAOKA, Y. Atomic structure analysis of gallium oxide at the Al2O3/GaN interface using photoelectron holography. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, AUG 1 2022, vol. 15, no. 8. Dostupné na: https://doi.org/10.35848/1882-0786/ac7dd9. SHIBATA, T. - UENUMA, M. - YAMADA, T. - YOSHITSUGU, K. - HIGASHI, M. - NISHIMURA, K. - URAOKA, Y. Effects of carbon impurity in ALD-Al2O3 film on HAXPES spectrum and electrical properties of Al2O3/AlGaN/GaN MIS structure. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUN 1 2022, vol. 61, no. 6. Dostupné na: https://doi.org/10.35848/1347-4065/ac646d. WANG, C.J. - LU, Y. - LIAO, C.H. - CHANDROTH, S. - YUVARAJA, S. - LI, X.H. Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JUN 1 2022, vol. 61, no. 6. Dostupné na: https://doi.org/10.35848/1347-4065/ac6a32. MIZOBATA, H. - NOZAKI, M. - KOBAYASHI, T. - HOSOI, T. - SHIMURA, T. - WATANABE, H. Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, MAY 1 2022, vol. 61, no. SC. Dostupné na: https://doi.org/10.35848/1347-4065/ac44cd. ZHANG, T. - HUANG-FU, Z.C. - QIAN, Y.Q. - GAO, H. - BROWN, J.B. - RAO, Y. Photoinduced Surface Electric Fields and Surface PopulationDynamics of GaP(100) Photoelectrodes. In JOURNAL OF PHYSICAL CHEMISTRY C. ISSN 1932-7447, APR 14 2022, vol. 126, no. 14, p. 6531-6541. Dostupné na: https://doi.org/10.1021/acs.jpcc.2c01806. DORING, P. - SINNWELL, M. - REINER, R. - DRIAD, R. - WALTEREIT, P. - LEONE, S. - MULLER, S. - MIKULLA, M. - AMBACHER, O. On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, MAR 21 2022, vol. 131, no. 11. Dostupné na: https://doi.org/10.1063/5.0079760. BABY, R. - VENUGOPALRAO, A. - CHANDRASEKAR, H. - RAGHAVAN, S. - RANGARAJAN, M. - NATH, D.N. Study of the impact of interface traps associated with SiN (X) passivation on AlGaN/GaN MIS-HEMTs. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 1 2022, vol. 37, no. 3. Dostupné na: https://doi.org/10.1088/1361-6641/ac48dd. ZHANG, X.D. - WEI, X. - ZHANG, P.P. - ZHANG, H. - ZHANG, L. - DENG, X.G. - FAN, Y.M. - YU, G.H. - DONG, Z.H. - FU, H.Q. - CAI, Y. - FU, K. - ZHANG, B.S. Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric. In ELECTRONICS. MAR 2022, vol. 11, no. 6. Dostupné na: https://doi.org/10.3390/electronics11060895. OZAKI, S. - YAITA, J. - YAMADA, A. - MINOURA, Y. - OHKI, T. - OKAMOTO, N. - NAKAMURA, N. - KOTANI, J. Surface-Oxide-Controlled InAlGaN/GaN High-Electron-Mobility Transistors Using Al2O3-Based Insulated-Gate Structures with H2O Vapor Pretreatment. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, APR 2022, vol. 219, no. 7. Dostupné na: https://doi.org/10.1002/pssa.202100638. PAZ-MARTINEZ, G. - INIGUEZ-DE-LA-TORRE, I. - SANCHEZ-MARTIN, H. - NOVOA-LOPEZ, J.A. - HOEL, V. - CORDIER, Y. - MATEOS, J. - GONZALEZ, T. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs. In SENSORS. FEB 2022, vol. 22, no. 4. Dostupné na: https://doi.org/10.3390/s22041515. WU, Z. - REN, K.L. - AN, Y. - YIN, L.Q. - LU, X.Z. - GUO, A.Y. - ZHANG, J.H. Simulation Study on the Size Effect and Transient Characteristics of Micro-LEDs. In 2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS, SSLCHINA: IFWS. 2022, p. 293-295. Dostupné na: https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070998. Enisherlova, K.L., Seidman, L.A., Bogolyubova, S.Y.: Effect of Treatment in Nitrogen Plasma on the Electrical Parameters of AlGaN/GaN Heterostructures In Russian Microelectronics 51 (2022), pp. 686-695 KNEZEVIC, Tihomir - NANVER, Lis K. Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers. In IEEE International Conference on Microelectronic Test Structures, 2023-01-01, 2023-March, pp. Dostupné na: https://doi.org/10.1109/ICMTS55420.2023.10094164. CHAUDHURI, R.R. - GUPTA, A. - JOSHI, V. - MALIK, R.R. - GUPTA, S.D. - SHRIVASTAVA, M. Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic Rsubon /subBehavior in AlGaN/GaN HEMTs-Part I. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, DEC 2023, vol. 70, no. 12, p. 6175-6182. Dostupné na: https://doi.org/10.1109/TED.2023.3323439. RUMMEL, B.D. - COOPER, J.A. - MORISETTE, D.T. - YATES, L. - GLASER, C.E. - BINDER, A.T. - RAMADOSS, K. - KAPLAR, R.J. Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance-voltage measurements in wide bandgap semiconductors. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, SEP 28 2023, vol. 134, no. 12. Dostupné na: https://doi.org/10.1063/5.0158333. ZHANG, Y. - GU, Y.T. - CHEN, J.X. - ZHU, Y.T. - CHEN, B.L. - JIANG, H.X. - LAU, K.M. - ZOU, X.B. Small Vsubth /subShift and Low Dynamic RON in GaN MOSHEMT With ZrOsub2/sub Gate Dielectric. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, NOV 2023, vol. 70, no. 11, p. 5590-5595. 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Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JAN 1 2023, vol. 62, no. SA. Dostupné na: https://doi.org/10.35848/1347-4065/ac7630. MALIK, R.R. - SHAJI, A.N. - KHAN, J.Z. - BHATTACHARYA, M. - MUNSHI, M.A. - CHAUDHURI, R.R. - JOSHI, V. - SHRIVASTAVA, M. Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs. In 2023 45TH ANNUAL EOS/ESD SYMPOSIUM, EOS/ESD. ISSN 0739-5159, 2023. Dostupné na: https://doi.org/10.23919/EOS/ESD58195.2023.10287740. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2021 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1063/5.0039564 
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File name Access Size Downloaded Type License Controlling surface interface states in GaNbased transistors.pdf available 9.7 MB 6 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2021 2020 2.546 Q2 0.699 Q2
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