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Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements

  1. TitleInfluence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements
    Author Izsák Tibor SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Babchenko Oleg 1983

    Vincze A.

    Vojs M.

    Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Kromka A.

    Source document Materials Science and Engineering B - Solid-State Materials for Advanced Technology. Vol. 273 (2021), no. 115434
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2021
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1016/j.mseb.2021.115434
    article

    article

    File nameAccessSizeDownloadedTypeLicense
    Influence of SiON interlayer on the diamond GaN heterostructures studied by Raman.pdfavailable2.7 MB0Author's preprint
    Influence of SiON interlayer on the diamond GaN heterostructures studied.pdfNeprístupný/archív2.9 MB1Publisher's version
    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    202120204.051Q20.850Q1
Number of the records: 1  

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