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In(Ga)N 3D growth on GaN-buffered on-axis and off-axis (0001) sapphire substrates by MOCVD
Title In(Ga)N 3D growth on GaN-buffered on-axis and off-axis (0001) sapphire substrates by MOCVD Author Rosová Alica 1962 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Kučera Michal 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV ORCID Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Nanomaterials-Basel. Vol. 12 (2022), no. 3496 Language eng - English Country CH - Switzerland Document kind rozpis článkov z periodík (rbx) Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2022 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.3390/nano12193496 article
File name Access Size Downloaded Type License In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD.pdf available 5.4 MB 5 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2022 2021 5.719 Q1 0.839 Q1
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