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MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures

  1. TitleMSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures
    Author Marso M.
    Co-authors Bernát J.

    Javorka P.

    Fox A.

    Wolter M.

    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

    Source document . P. 151-154 ASDAM 2004 : conference proceeding of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia October 17-21, 2004. - Piscataway : IEEE, 2004 / Osvald Jozef 1953 ; Haščík Štefan 1956
    Languageeng - English
    CountryUS - United States of America
    Document kindrozpis článkov z periodík (rzb)
    CitationsCAI, Q. - YOU, H.F. - GUO, H. - WANG, J. - LIU, B. - XIE, Z.L. - CHEN, D.J. - LU, H. - ZHENG, Y.D. - ZHANG, R. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays. In LIGHT-SCIENCE & APPLICATIONS. ISSN 2047-7538, APR 30 2021, vol. 10, no. 1. Dostupné na: https://doi.org/10.1038/s41377-021-00527-4.
    CategoryAFD - Published papers from domestic scientific conferences
    Year2004
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2004
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