Pb/Si(111)1x1-H Schottky barrier height

Number of the records: 1

Title	Pb/Si(111)1x1-H Schottky barrier height
Author	Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Co-authors	Hricovíni K.
	Le Lay G.
	Aristov V.Y.

Source document	Fizika A. Vol. 4 (1995), p. 191-197
Language	eng - English
Country	CV - Cape Verde
Document kind	rozpis článkov z periodík (rbx)
Keywords	bariéry Schottky * Pb/Si(111)1x1-H * výskum základný
Citations	HORVATH, Z.J. VACUUM. ISSN 0042-207X, AUG-OCT 1995, vol. 46, no. 8-10, p. 963-966.
	THEBE, M.J. - MOLOI, S.J. - MSIMANGA, M. Changes in electrical properties and conduction mechanisms of Pd/n-Si diodes due to niobium dopant. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. ISSN 0921-5107, NOV 2021, vol. 273.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	1995

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
1995

Number of the records: 1