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Photocurrent spectroscopy of semi-insulating GaAS with a new contact metallization: indication of 2DEG formed at the M-S interface
Title Photocurrent spectroscopy of semi-insulating GaAS with a new contact metallization: indication of 2DEG formed at the M-S interface Author Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV Co-authors Kováč Ján Mudroň J. Hubík P. Dubecký Matúš 1982 SAVFYZIK - Fyzikálny ústav SAV Gombia E. Source document / Vajda J. ; Weiss M. APCOM 2010 : proceedings of the 16th International Conference on Applied Physics of Condensed matter. P. 29-32. - Bratislava : Slovenská technická univerzita v Bratislave, 2010 ; International Conference on Applied Physics of Condensed Matter APCOM 2010 Language eng - English Country SK - Slovak Republic Document kind rozpis článkov z periodík (rzb) Category AED - Scientific papers in domestic peer-reviewed proceedings, monographs Category of document (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok Year 2010 article
rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010
Number of the records: 1