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Photocurrent spectroscopy of semi-insulating GaAS with a new contact metallization: indication of 2DEG formed at the M-S interface

  1. TitlePhotocurrent spectroscopy of semi-insulating GaAS with a new contact metallization: indication of 2DEG formed at the M-S interface
    Author Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Kováč Ján

    Mudroň J.

    Hubík P.

    Dubecký Matúš 1982 SAVFYZIK - Fyzikálny ústav SAV

    Gombia E.

    Source document / Vajda J. ; Weiss M. APCOM 2010 : proceedings of the 16th International Conference on Applied Physics of Condensed matter. P. 29-32. - Bratislava : Slovenská technická univerzita v Bratislave, 2010 ; International Conference on Applied Physics of Condensed Matter APCOM 2010
    Languageeng - English
    CountrySK - Slovak Republic
    Document kindrozpis článkov z periodík (rzb)
    CategoryAED - Scientific papers in domestic peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2010
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2010
Number of the records: 1  

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