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Dislocation generation related to micro-craks in Si wafers: High temperature in situ study with white beam X-ray topography
Title Dislocation generation related to micro-craks in Si wafers: High temperature in situ study with white beam X-ray topography Author Danilewsky A. Co-authors Wittge J. Hess A. Cröll A. Allen David McNally P. Vagovič Patrik SAVELEK - Elektrotechnický ústav SAV Cecilia A. Li Z.J. Gorostegui-Colinas E. Elizelde M.R. Source document . Vol. 268, (2010), p. 399-402 Nuclear Instruments and Methods in Physical Research B Language eng - English Document kind rozpis článkov z periodík (rbx) Citations REIMANN, C. - FRIEDRICH, J. - MEISSNER, E. - ORIWOL, D. - SYLLA, L. In ACTA MATERIALIA. JUL 2015, vol. 93, p. 129-137. GUO, J. - AILIHUMAER, T. - PENG, H. - RAGHOTHAMACHAR, B. - DUDLEY, M. In-Situ Synchrotron X-Ray Topography Study on the Stress Relaxation Process in 4H-SiC Homoepitaxial Layers. In GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8. ISSN 1938-5862, 2018, vol. 86, no. 12, pp. 75-82. ZHAN XIA - KELLEHER, Joe - GAO JIAN-BO - MA YAN-LING - CHU MING-QIANG - ZHANG SHU-YAN - ZHANG PENG - PADDEA, Sanjooram - GONG ZHI-FENG - HOU XIAO-DONG. High temperature sample environment upgrade of ISIS engineering materials in-situ diffraction experiment. In ACTA PHYSICA SINICA. ISSN 1000-3290, 2019, vol. 68, no. 13, pp.132901 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2010 Registered in WOS Registered in CCC article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010 2009 1.156 Q1 0.680 Q2
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