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Investigation of deep energy levels in heterostructures based on GaN by DLTS
Title Investigation of deep energy levels in heterostructures based on GaN by DLTS Author Stuchlíková Ľ. Co-authors Šebok J. Rybár J. Petrus M. Nemec M. Harmatha L. Benkovská J. Kováč Ján Škriniarová Jaroslava Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Paskiewicz R. Tlaczala M. Source document ASDAM 2010 : proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems. P. 135-138. - Piscataway : IEEE, 2010 / Breza J. ; Donoval D. ; Vavrinský E. Language eng - English Document kind rozpis článkov z periodík (rzb) Citations GOSWAMI, Arunesh - TREW, Robert J. - BILBRO, Griff L. In IEEE TRANSACTIONS ON ELECTRON DEVICES. APR 2014, vol. 61, no. 4, p. 1014-1021. ANAND, M.J. - NG, G.I. - ARULKUMARAN, S. - SYAMAL, B. - ZHOU, X. In APPLIED PHYSICS EXPRESS. OCT 2015, vol. 8, no. 10. DIVAY, A. - MASMOUDI, M. - LATRY, O. - DUPERRIER, C. - TEMCAMANI, F. In MICROELECTRONICS RELIABILITY. AUG-SEP 2015, vol. 55, no. 9-10, p. 1703-1707. Divay, A., Latry, O., Duperrier, C., Temcamani, F. Journal of Semiconductors 37 (2016), 014001 ZHENG, X. - FENG, S.W. - ZHANG, Y.M. - YANG, J.W. In MICROELECTRONICS RELIABILITY. AUG 2016, vol. 63, p. 46-51. DIVAY, A. - MASMOUDI, M. - LATRY, O. - DUPERRIER, C. - TEMCAMANI, F. - EUDELINE, P. In 2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON). 2016. MENEGHESSO, G. - MENEGHINI, M. - SILVESTRI, R. - VANMEERBEEK, P. - MOENS, P. - ZANONI, E. In JAPANESE JOURNAL OF APPLIED PHYSICS. JAN 2016, vol. 55, no. 1, SI. ROSSETTO, I. - BISI, D. - DE SANTI, C. - STOCCO, A. - MENEGHESSO, G. - ZANONI, E. - MENEGHINI, M. In POWER GAN DEVICES: MATERIALS, APPLICATIONS AND RELIABILITY. 2017, p. 197-236. DE SANTI, C. - MENEGHINI, M. - MENEGHESSO, G. - ZANONI, E. Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications. In IET POWER ELECTRONICS. APR 10 2018, vol. 11, no. 4, SI, p. 668-674. JABBARI, I. - BAIRA, M. - MAAREF, H. - MGHAIETH, R. C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps. In PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. OCT 2018, vol. 104, p. 216-222. ZHENG, X. - FENG, S.W. - ZHANG, Y.M. - LI, X. - BAI, K. Identifying the Traps in the Channel Region in GaN-Based HEMTs Using a Nonmonotone Drain Current Transient. In IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. SEP 2019, vol. 19, no. 3, p. 509-513. CARIA, A. - DE SANTI, C. - ZAMPERETTI, F. - HUANG, X. - FU, H. - CHEN, H. - ZHAO, Y. - NEVIANI, A. - MENEGHESSO, G. - ZANONI, E. - MENEGHINI, M. GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress. In MICROELECTRONICS RELIABILITY. ISSN 0026-2714, NOV 2020, vol. 114, SI. CARIA, A. - DE SANTI, C. - DOGMUS, E. - MEDJDOUB, F. - ZANONI, E. - MENEGHESSO, G. - MENEGHINI, M. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors. In ELECTRONICS. NOV 2020, vol. 9, no. 11. CARIA, A. - DE SANTI, C. - ZAMPERETTI, F. - HUANG, X.Q. - FU, H.Q. - CHEN, H. - ZHAO, Y.J. - MENEGHESSO, G. - ZANONI, E. - MENEGHINI, M. Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition. In GALLIUM NITRIDE MATERIALS AND DEVICES XV. ISSN 0277-786X, 2020, vol. 11280. MENEGHINI, M. - DE SANTI, C. - ABID, I. - BUFFOLO, M. - CIONI, M. - KHADAR, R.A. - NELA, L. - ZAGNI, N. - CHINI, A. - MEDJDOUB, F. - MENEGHESSO, G. - VERZELLESI, G. - ZANONI, E. - MATIOLI, E. GaN-based power devices: Physics, reliability, and perspectives. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, NOV 8 2021, vol. 130, no. 18. REMESH, N. - CHANDRASEKAR, H. - VENUGOPALRAO, A. - RAGHAVAN, S. - RANGARAJAN, M. - NATH, D.N. Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, AUG 21 2021, vol. 130, no. 7. PUTCHA, V. - CHENG, L. - ALIAN, A. - ZHAO, M. - LU, H. - PARVAIS, B. - WALDRON, N. - LINTEN, D. - COLLAERT, N. On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. In 2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). ISSN 1541-7026, 2021. BUFFOLO, M. - CARIA, A. - PIVA, F. - ROCCATO, N. - CASU, C. - DE SANTI, C. - TRIVELLIN, N. - MENEGHESSO, G. - ZANONI, E. - MENEGHINI, M. Defects and Reliability of GaN-Based LEDs: Review and Perspectives. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, APR 2022, vol. 219, no. 8. Dostupné na: https://doi.org/10.1002/pssa.202100727. MUKHERJEE, J. - CHAUBEY, R.K. - RAWAL, D.S. - DHAKA, R.S. Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, JAN 2022, vol. 137. Dostupné na: https://doi.org/10.1016/j.mssp.2021.106222. Category AEC - Scientific papers in foreign peer-reviewed proceedings, monographs Category of document (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok Year 2010 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010
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