Number of the records: 1
Radiation hardness of 4H-SiC structures
Title Radiation hardness of 4H-SiC structures Author Kósa A. Co-authors Benkovská J. Stuchlíková Ľ. Búc D. Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV Harmatha L. Source document ASDAM 2014 : The 10th International Conference on Advanced Semiconductor Devices and Microsystems. P. 41-44. - : IEEE, 2014 / Breza Juraj ; Donoval Daniel ; Vavrinský E. Language slo - Slovak Document kind rozpis článkov z periodík (rzb) Citations HASBULLAH, Nurul Fadzlin - KHAIRI, Mohamad Azim Mohd - ABDULLAH, Yusof. Response of electron-irradiated silicon carbide schottky power diodes at elevated temperature. In International Journal of Power Electronics, 2021-01-01, 14, 2, pp. 143-155. ISSN 1756638X. Dostupné na: https://doi.org/10.1504/IJPELEC.2021.117062. Category AFC - Published papers from foreign scientific conferences Year 2014 
article
rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014
Number of the records: 1