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Annealing-induced formation of Sn2P2S6 crystallites in As2S3-based glass matrix

  1. TitleAnnealing-induced formation of Sn2P2S6 crystallites in As2S3-based glass matrix
    Author Azhniuk Y.M.
    Co-authors Gomonnai A.V.

    Gomonnai O.O.

    Hasynets S.M.

    Kováč František 1951 SAVMATVY - Ústav materiálového výskumu SAV    SCOPUS

    Lopushansky V.V.

    Petryshynets Ivan 1984 SAVMATVY - Ústav materiálového výskumu SAV    SCOPUS

    Rubish V.M.

    Zahn D.R.T.

    Source document Semiconductor Physics, Quantum Electronics and Optoelectronics. Vol. 18, no. 3 (2015), p. 248-254
    Languageeng - English
    CountryUA - Ukraine
    Document kindrozpis článkov z periodík (rbx)
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2016
    Registered inWOS
    DOI 10.15407/spqeo18.03.248
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    N
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2015
Number of the records: 1  

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