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Structural and Electrical Characterization of SiGe Heterostructures Containing a Pure Ge Strained Quantum Well
Title Structural and Electrical Characterization of SiGe Heterostructures Containing a Pure Ge Strained Quantum Well Author Hassan A.H.A. Co-authors Mironov O.A. Dobbie A. Morris R.J.H. Halpin J.E. Shah V.A. Myronov M. Leadley D.R. Feher Alexander Čižmár E. Gabáni Slavomír 1974- SAVEXFYZ - Ústav experimentálnej fyziky SAV RID RID ORCID Andrievskii V.V. Berkutov I.B. Source document ELNANO 2013 : 33rd International Scientific Conference Electronics and Nanotechnology, Kiev, Ukraine, 16 - 19 April 2013. p. 51-55. - [S.l. : s.n.], 2013 ; ELNANO 2013 International Scientific Conference Electronics and Nanotechnology Language eng - English Document kind rozpis článkov z periodík (rzb) Citations LU, T. M. - HARRIS, C. T. - HUANG, S. H. - CHUANG, Y. - LI, J. Y. - LIU, C. W. Effective g factor of low-density two-dimensional holes in a Ge quantum well. In Applied Physics Letters. ISSN 00036951, 2017-09-04, 111, 10. Category AFC - Published papers from foreign scientific conferences Year 2013 Registered in WOS Registered in SCOPUS DOI 10.1109/ELNANO.2013.6552021 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2013
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