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Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment
Title Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment Author Babchenko Oleg 1983 SAVELEK - Elektrotechnický ústav SAV Co-authors Dzuba Jaroslav 1987 SAVELEK - Elektrotechnický ústav SAV Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Vojs M. Vincze A. Izsák Tibor ORCID Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Applied Surface Science. Vol. 395 (2017), p. 92-97 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations MISHRA, M. - KRISHNA, S. - AGGARWAL, N. - GUPTA, G. In APPLIED SURFACE SCIENCE. JUN 15 2017, vol. 407, p. 255-259. HUANG, H.L. - SUN, Z.H. - CAO, Y.Q. - LI, F.Y. - ZHANG, F. - WEN, Z.X. - ZHANG, Z.F. - LIANG, Y.C. - HU, L.Z. Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. AUG 30 2018, vol. 51, no. 34. LEE, M.L. - CHEN, C.H. - SHEU, J.K. Al0.3Ga0.7N/GaN heterostructure transistors with a regrown p-GaN gate formed with selective-area Si implantation as the regrowth mask. In PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. ISSN 1386-9477, OCT 2020, vol. 124. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2017 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/j.apsusc.2016.06.105 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2017 2016 3.387 Q1 0.958 Q1
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