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Study of correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy
Title Study of correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy Author Amimer K. Co-authors Georgakilas A. Androulidaki M. Tsagaraki K. Pavelescu M. Mikroulis S. Constantinidis G. Arbiol J. Peiro F. Cornet A. Calamiotou M. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Davydov V.Y. Source document Materials Science and Engineering, B - Solid-State Materials for Advanced Technology. Vol. 80 (2001), p. 304-308 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations JEON, H.C. - LEE, H.S. - SI, S.M. - JEONG, Y.S. - NA, J.H. - PARK, Y.S. - KANG, T.W. - OH, J.E. Characteristics of GaN epilayer grown on Al2O3 with AlN buffer layer by molecular beam epitaxy. CURRENT APPLIED PHYSICS. ISSN 1567-1739, JUN 2003, vol. 3, no. 4, p. 385-388. JEON, H.C. - LEE, S.J. - KUMAR, S. - KANG, T.W. - LEE, N.H. - KIM, T.W. In JOURNAL OF THE KOREAN PHYSICAL SOCIETY. APR 2014, vol. 64, no. 8, p. 1128-1131. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2001 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2001 2000 0.592
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