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Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors
Title Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors Author Ostermaier C. Co-authors Pozzovivo G. Basnar B. Schrenk W. Schmid M. Tóth L. Pécz B. Carlin J.-F. Gonschorek M. Grandjean N. Strasser G. Pogany D. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Applied Physics Letters. Vol. 96, (2010), 263515 Language eng - English Country US - United States of America Document kind rozpis článkov z periodík (rbx) Citations WANG, R.H. - SAUNIER, P. - TANG, Y. - FANG, T.A. - GAO, X.A. - GUO, S.P. - SNIDER, G. - FAY, P. - JENA, D. - XING, H.L. In IEEE ELECTRON DEVICE LETTERS. MAR 2011, vol. 32, no. 3, p. 309-311. LI, L.A. - KISHI, A. - SHIRAISHI, T. - JIANG, Y. - WANG, Q.P. - AO, J.P. - OHNO, Y. In JAPANESE JOURNAL OF APPLIED PHYSICS. NOV 2013, vol. 52, no. 11, 2, SI. VALLO, M. - LALINSKY, T. - DOBROCKA, E. - VANKO, G. - VINCZE, A. - RYGER, I. In APPLIED SURFACE SCIENCE. FEB 15 2013, vol. 267, p. 159-163. WU, Y.F. - SASANGKA, W.A. - DEL ALAMO, J.A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. NOV 2017, vol. 64, no. 11, p. 4435-4441. EISNER, S.R. - ALPERT, H.S. - CHAPIN, C.A. - YALAMARTHY, A.S. - SATTERTHWAITE, P.F. - NASIRI, A. - PORT, S. - ANG, S. - SENESKY, D.G. Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment. In 2021 IEEE AEROSPACE CONFERENCE (AEROCONF 2021). ISSN 1095-323X, 2021. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2010 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1063/1.3458700 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010 2009 3.554 2.826 Q1
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