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Influence of interface states on C-V characteristics of AlGaN/GaN heterostructures

  1. TitleInfluence of interface states on C-V characteristics of AlGaN/GaN heterostructures
    Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Source document ASDAM 2010 : proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems. P. 167-170. - Piscataway : IEEE, 2010 / Breza J. ; Donoval D. ; Vavrinský E.
    Languageeng - English
    Document kindrozpis článkov z periodík (rzb)
    CitationsKUMAR, M. - SHEU, G. - TSAI, J.R. - YANG, S.M. - GUO, Y.F. In CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012). 2012, vol. 44, no. 1, p. 1285-1289.
    MOSTEFAOUI, M. - MAZARI, H. - AMEUR, K. - MANSOURI, S. - BENSEDDIK, N. - BENAMARA, Z. - KHELIFI, R. - BENYAHYA, N. - BLUET, J. M. - BRU-CHEVALLIER, C. - CHIKHAOUI, W. In JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. JUL-AUG 2014, vol. 16, no. 7-8, p. 849-853.
    HARMATHA, L. - STUCHLIKOVA, L. - RACKO, J. - MAREK, J. - PECHACEK, J. - BENKO, P. - NEMEC, M. - BREZA, J. In APPLIED SURFACE SCIENCE. SEP 1 2014, vol. 312, p. 102-106.
    CategoryAEC - Scientific papers in foreign peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2010
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2010
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