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Effect of bias conditions on pressure sensors based on AlGaN/GaN high electron mobility transistor
Title Effect of bias conditions on pressure sensors based on AlGaN/GaN high electron mobility transistor Author Le Boulbar E.D. Co-authors Edwards M.J. Vittoz S. Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Brinkfeldt K. Johander P. Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Bowen C.R. Allsopp D.W.E. Source document Sensors and Actuators A. Vol. 194, (2013), p. 247-251 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations MUNUSAMI, R. - YAKKALA, B.R. - PRABHAKAR, S. In SUPERLATTICES AND MICROSTRUCTURES. DEC 2013, vol. 64, p. 388-398. KOCK, H. - CHAPIN, C.A. - OSTERMAIER, C. - HABERLEN, O. - SENESKY, D.G. In SENSORS FOR EXTREME HARSH ENVIRONMENTS. 2014, vol. 9113. YAKUPHANOGLU, F. - SHOKR, F.S. - GUPTA, R.K. - AL-GHAMDI, A.A. - BIN-OMRAN, S. - AL-TURKI, Y. - EL-TANTAWY, F. In JOURNAL OF ALLOYS AND COMPOUNDS. NOV 25 2015, vol. 650, p. 671-675. MAURYA, D. - YAN, Y.K. - PRIYA, S. In ADVANCED MATERIALS FOR CLEAN ENERGY. 2015, p. 143-178. YALAMARTHY, Ananth Saran - SENESKY, Debbie G. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 2016, vol. 31, no. 3. Senesky, D.G., So, H., Suria, A.J., Yalamarthy, A.S., Jain, S.R., Chapin, C.A., Chiamori, H.C., Hou, M. In Semiconductor-Based Sensors. World Scientific Publishing Co. 2016. ISBN: 978-981314673-0. P. 395-433 ANDREWS, J.B. - CARDENAS, J.A. - MULLETT, J. - FRANKLIN, A.D. In 2017 IEEE SENSORS. 2017, p. 25-27. DOWLING, K.M. - SO, H. - TOOR, A. - CHAPIN, C.A. - SENESKY, D.G. In MICROELECTRONIC ENGINEERING. APR 5 2017, vol. 173, p. 54-57. CHAPIN, C.A. - MILLER, R.A. - DOWLING, K.M. - CHEN, R.Q. - SENESKY, D.G. In SENSORS AND ACTUATORS A-PHYSICAL. AUG 15 2017, vol. 263, p. 216-223. WANG, A. - ZENG, L.Y. - WANG, W. Surface donor states-dependent bare surface barrier height and 2DEG density of AlGaN/GaN heterostructure exerted uniaxial stress. In MATERIALS RESEARCH EXPRESS. FEB 2018, vol. 5, no. 2. WANG, A.S. - ZENG, L.Y. - WANG, W. - CALLE, F. Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing. In AIP ADVANCES. MAR 2018, vol. 8, no. 3. GAJULA, D. - JAHANGIR, I. - KOLEY, G. High Temperature AlGaN/GaN Membrane Based Pressure Sensors. In MICROMACHINES. MAY 2018, vol. 9, no. 5. TAN, X. - LV, Y.J. - ZHOU, X.Y. - WANG, Y.G. - SONG, X.B. - GU, G.D. - JI, P.F. - YANG, X.L. - SHEN, B. - FENG, Z.H. - CAI, S.J. AlGaN/GaN pressure sensor with a Wheatstone bridge structure. In AIP ADVANCES. AUG 2018, vol. 8, no. 8. ANDREWS, J.B. - CARDENAS, J.A. - LIM, C.J. - NOYCE, S.G. - MULLETT, J. - FRANKLIN, A.D. Fully Printed and Flexible Carbon Nanotube Transistors for Pressure Sensing in Automobile Tires. In IEEE SENSORS JOURNAL. OCT 1 2018, vol. 18, no. 19, p. 7875-7880. LUO, J. - GUAN, M. - ZHANG, Y. - CHEN, L.Q. - ZENG, Y.P. The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors. In JOURNAL OF SEMICONDUCTORS. DEC 2018, vol. 39, no. 12. CHAPIN, Caitlin A. - DOWLING, Karen M. - PHAN, Hoang Phuong - CHEN, Ruiqi - SENESKY, Debbie G. Temperature-dependent transient behavior of AlGaN/GaN high electron mobility pressure sensors. In 2018 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2018, 2018-01-01, pp. 238-239. WANG, Ashu - ZENG, Lingyan - WANG, Wen - LUO, Zhenghua. Static and dynamic simulation studies on the AlGaN/GaN pressure sensor. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, 2019, vol. 34, no. 11, pp. MOSER, M. - SCHERJON, C. - PRADHAN, M. - ALOMARI, M. - BURGHARTZ, J. N. GaN-based pressure sensor for harsh environments with on-chip temperature compensation. In MikroSystemTechnik Kongress 2021: Mikroelektronik, Mikrosystemtechnik und ihre Anwendungen Innovative Produkte fur zukunftsfahige Markte, Proceedings, 2021-01-01, pp. 250-253. UPADHYAY, Kavita T. - CHATTOPADHYAY, Manju K. Sensor applications based on AlGaN/GaN heterostructures. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, vol. 263, no., pp. ISSN 0921-5107. Dostupné na: https://doi.org/10.1016/j.mseb.2020.114849. WANG, Ashu - ZENG, Lingyan - WANG, Wen. Study on the GaN/AlGaN Piezotronic Effect Applied in Pressure Sensors. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, vol. 10, no. 3, pp. ISSN 2162-8769. Dostupné na: https://doi.org/10.1149/2162-8777/abeecf. NGUYEN, Hong-Quan - NGUYEN, Thanh - TANNER, Philip - NGUYEN, Tuan-Khoa - FOISAL, Abu Riduan Md - FASTIER-WOOLLER, Jarred - NGUYEN, Tuan-Hung - PHAN, Hoang-Phuong - NGUYEN, Nam-Trung - DAO, Dzung Viet. Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor. In APPLIED PHYSICS LETTERS, 2021, vol. 118, no. 24, pp. ISSN 0003-6951. Dostupné na: https://doi.org/10.1063/5.0053701. MOSER, Matthias - PRADHAN, Mamta - ALOMARI, Mohammed - BURGHARTZ, Joachim N. Model and Simulation of GaN-Based Pressure Sensors for High Temperature Applications-Part II: Sensor Design and Simulation. In IEEE SENSORS JOURNAL, 2021, vol. 21, no. 18, pp. 20176-20183. ISSN 1530-437X. Dostupné na: https://doi.org/10.1109/JSEN.2021.3096695. MOSER, Matthias - PRADHAN, Mamta - ALOMARI, Mohammed - BURGHARTZ, Joachim N. Model and Simulation of GaN-Based Pressure Sensors for High Temperature Applications-Part I: Physics Based Compact Modeling. In IEEE SENSORS JOURNAL, 2021, vol. 21, no. 18, pp. 20165-20175. ISSN 1530-437X. Dostupné na: https://doi.org/10.1109/JSEN.2021.3096206. WANG, Rui-Rong - GUO, Hao - TANG, Jun - LIU, Jin-Ping - LIU, Li-Shuang. Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT. In MICROMACHINES, 2021, vol. 12, no. 11, pp. Dostupné na: https://doi.org/10.3390/mi12111413. NALLUSAMY, N. - SINGHAL, R. - SHARMA, S.K. - RAWAL, D.S. HEMT Inspired GaN Optical Waveguides: Analysis Under Thermal Stress and Prospects. In IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. ISSN 1530-4388, SEP 2022, vol. 22, no. 3, p. 424-430. Dostupné na: https://doi.org/10.1109/TDMR.2022.3188317. AL-MAMUN, N.S. - WETHERINGTON, M. - WOLFE, D.E. - HAQUE, A. - REN, F. - PEARTON, S. Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors. In MICROELECTRONIC ENGINEERING. ISSN 0167-9317, JUN 1 2022, vol. 262. Dostupné na: https://doi.org/10.1016/j.mee.2022.111836. PARINOV, I.A. - CHERPAKOV, A.V. Overview: State-of-the-Art in the Energy Harvesting Based on Piezoelectric Devices for Last Decade. In SYMMETRY-BASEL. APR 2022, vol. 14, no. 4. Dostupné na: https://doi.org/10.3390/sym14040765. KIM, C.H. - LEE, M.G. - LIM, J.E. - LEE, S.H. - PARK, J.S. - KIM, B.C. - LEE, S.G. Structural and Electrical Properties of Nd-Doped (La,Sr)MnO3 Bulk Ceramics. In TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS. ISSN 1229-7607, FEB 2022, vol. 23, no. 1, p. 19-24. Dostupné na: https://doi.org/10.1007/s42341-021-00372-7. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2013 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/j.sna.2013.02.017 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2013 2012 3.535 Q1 1.412 Q1
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