Reduction of skin effect losses in double-level-T-gate structure

Number of the records: 1

Title	Reduction of skin effect losses in double-level-T-gate structure
Author	Mikulics M.
Co-authors	Hardtdegen H.
	Arango Y.C.
	Adam Roman
	Fox A.
	Grützmacher D.
	Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Stanček S.
	Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
	Kordoš Peter SAVELEK - Elektrotechnický ústav SAV
	Sofer Z.
	Juul L.
	Marso M.

Source document	Applied Physics Letters. Vol. 105, (2014), 232102
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	MADHULIKA - MALIK, Amit - KAMBOJ, Priyanka - AWASTHI, Shivansh - THAKUR, Priyanka - JAIN, Neelu - MISHRA, Meena - KUMAR, Sanjeev - RAWAL, Dipendra S. - SINGH, Arun K. Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, vol. 36, no. 3, pp. ISSN 0268-1242. Dostupné na: https://doi.org/10.1088/1361-6641/abd265.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2014
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1063/1.4903468

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2014	2013	3.515	Q1	2.149	Q1

Number of the records: 1