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The effect of xe ion and neutron irradiation on the properties of SiC and SiC(N) film prepared by PECVD technology
Title The effect of xe ion and neutron irradiation on the properties of SiC and SiC(N) film prepared by PECVD technology Author Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV Borzakov S.B. Skuratov V.A. Kobzev A.P. Kleinová Angela 1960- SAVPOLYM - Ústav polymérov SAV ORCID Sasinková Vlasta 1954- SAVCHEM - Chemický ústav SAV Source document / Ristič Goran ; Ajayi-Banji A.A. ; Antsiferova A.A. RAD 2015 : proceedings Third International Conference on Radiation and Applications in Various Fields of Research. P. 399-403. - Niš : RAD Association, 2015 Language eng - English Document kind rozpis článkov z periodík (rzb) Citations SU, Q. - WANG, T.Y. - GIGAX, J. - SHAO, L. - LANFORD, W.A. - NASTASI, M. - LI, L.Y. - BHATTARAI, G. - PAQUETTE, M.M. - KING, S.W. Influence of topological constraints on ion damage resistance of amorphous hydrogenated silicon carbide. In ACTA MATERIALIA. ISSN 1359-6454, FEB 15 2019, vol. 165, p. 587-602. Category AFC - Published papers from foreign scientific conferences Year 2015 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2015
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