Structural and electrical properties of amorphous nitrogen doped SiC thin films annealed by pulsed electron beam

Number of the records: 1

Title	Structural and electrical properties of amorphous nitrogen doped SiC thin films annealed by pulsed electron beam
Author	Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Co-authors	Šafránková Jaroslava SAVELEK - Elektrotechnický ústav SAV
	Hotový I.
	Kobzev A.P.
	Balalykin Nikolay I.

Source document	/ Breza J. ASDAM '98. P. 179-182 : Proceedings of the 2nd International Conference on Advanced Semiconductor Devices and Microsystems. - Piscataway : IEEE, 1998
Language	eng - English
Country	US - United States of America
Document kind	rozpis článkov z periodík (rzb)
Category	AEC - Scientific papers in foreign peer-reviewed proceedings, monographs
Category of document (from 2022)	V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
Type of document	príspevok
Year	1998

article

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
1998

Number of the records: 1