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Metal oxide/silicon oxide multilayer with smooth interfaces produced by in situ controlled plasma-enhanced MOCVD
Title Metal oxide/silicon oxide multilayer with smooth interfaces produced by in situ controlled plasma-enhanced MOCVD Author Hamelmann F. Co-authors Haindl G. Schmalhorst J. Aschentrup A. Majková Eva 1950 SAVFYZIK - Fyzikálny ústav SAV ORCID Kleineberg U. Heinzmann U. Klipp A. Jutzi P. Anopchenko A.S. SAVFYZIK - Fyzikálny ústav SAV Jergel Matej 1954- SAVFYZIK - Fyzikálny ústav SAV SCOPUS RID ORCID Luby Štefan 1941 SAVFYZIK - Fyzikálny ústav SAV Source document Thin Solid Films. Vol. 358 (2000), p. 90-93 Language eng - English Country NL - Netherlands Document kind rozpis článkov z periodík (rbx) Citations JUTZI, P - REUMANN, G. Cp* Chemistry of main-group elements. In JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 2000, vol., no. 14, pp. 2237-2244. ISSN 1472-7773. Dostupné na: https://doi.org/10.1039/b001365j. YANG, Zehua - ZHU, Jingtao - ZHU, Yunping - LUO, Hongxin - LI, Zhongliang - JIANG, Hui - ZHAO, Li. Asymmetric interface and growth mechanism in sputtered W/Si and WSi2/Si multilayers. In APPLIED SURFACE SCIENCE, 2022, vol. 604. ISSN 0169-4332. Dostupné na: https://doi.org/10.1016/j.apsusc.2022.154531. Category ADC Year 2000 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/S0040-6090(99)00695-1 article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2000 1999 1.100
Number of the records: 1