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Conduction-band discontinuities of strained and unstrained - layer InxGa1-xAs/GaAs and InxGa1-xAs/inP heterojunctions and quantum wells
Title Conduction-band discontinuities of strained and unstrained - layer InxGa1-xAs/GaAs and InxGa1-xAs/inP heterojunctions and quantum wells Author Hrivnák Ľubomír SAVELEK - Elektrotechnický ústav SAV Source document Physica Status Solidi A. Vol. 124, (1991), p. K111 Language eng - English Country GR - Greece Document kind rozpis článkov z periodík (rbx) Keywords InxGa1-xAs/GaAs * InxGa1-xAs/InP Citations VURGAFTMAN, I. - MEYER, J.R. - RAM-MOHAN, L.R. JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, JUN 1 2001, vol. 89, no. 11, Part 1, p. 5815-5875. PELA, R.R. - TELES, L.K. - MARQUES, M. - MARTINI, S. In JOURNAL OF APPLIED PHYSICS. JAN 21 2013, vol. 113, no. 3. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 1991 article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 1991
Number of the records: 1