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AlGaN/GaN based SAW-HEMT devices for chemical gas sensors operating in GHz range
Title AlGaN/GaN based SAW-HEMT devices for chemical gas sensors operating in GHz range Author Rýger Ivan 1987 SAVELEK - Elektrotechnický ústav SAV Co-authors Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Vallo Martin SAVELEK - Elektrotechnický ústav SAV Tomáška M. Ritomský Adrian 1956- SAVINFO - Ústav informatiky SAV SCOPUS RID Source document Procedia Engineering : Proc. Eurosensors XXV. Vol. 25 (2011), p. 1101-1104 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations WANG, Xuewen - SU, Xingxing - HU, Feng - HE, Lin - HE, Lewan - ZHANG, Zhiyong - ZHAO, Wu - WANG, Kai-Ge - WANG, Shuang. Growth AlxGa1-xN films on Si substrates by magnetron sputtering and high ammoniated two-step method. In JOURNAL OF ALLOYS AND COMPOUNDS. ISSN 0925-8388, 2016, vol. 667, no., pp. 346. UPADHYAY, Kavita T. - CHATTOPADHYAY, Manju K. Sensor applications based on AlGaN/GaN heterostructures. In MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. ISSN 0921-5107, 2021, vol. 263, no., pp. HORTA, I.M. - DAMASCENO, B.S. - OLIVEIRA, R.S.D. - PEREIRA, A.L.D. - MASSI, M. - SOBRINHO, A.S.D. - LEITE, D.M.G. AlGaN films grown by reactive magnetron sputtering on glass substrates with different Al content. In SURFACES AND INTERFACES. ISSN 2468-0230, AUG 2023, vol. 40. Dostupné na: https://doi.org/10.1016/j.surfin.2023.103023. Category ADEB - Scientific papers in other foreign journals not registered in Current Contents Connect without IF (non-impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2012 Registered in WOS Registered in SCOPUS DOI 10.1016/j.proeng.2011.12.271 
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