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Thermally oxidized InAlN of different compositions for InAlN/GaN heterostruture field-effect transistors
Title Thermally oxidized InAlN of different compositions for InAlN/GaN heterostruture field-effect transistors Author Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Co-authors Mikulics M. Stoklas Roman 1981 ORCID Čičo Karol Dadgar A. Grützmacher D. Krost A. Source document Journal of Electronics Materials. Vol. 41 (2012), p. 3013-3016 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations HUANG, X.X. - TANG, X.G. - LAI, J.L. - JIANG, Y.P. - LIU, Q.X. - XIONG, D.P. In JOURNAL OF ELECTRONIC MATERIALS. OCT 2015, vol. 44, no. 10, p. 3783-3787. LACHAB, M. - SULTANA, M. - FAREED, Q. - HUSNA, F. - ADIVARAHAN, V. - KHAN, A. Transport properties of SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate. In JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, vol. 47, no. 13, pp. ISSN 0022-3727. Dostupné na: https://doi.org/10.1088/0022-3727/47/13/135108. PALMESE, Elia - PEART, Matthew R. - BOROVAC, Damir - SONG, Renbo - TANSU, Nelson - WIERER, Jonathan J. Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 129, no. 12, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0035711. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2012 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1007/s11664-012-2096-4 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 1.466 Q2 0.844 Q1
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