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Defect states characterization of non-annealed and annealed Zr2/InAlN/GaN structures by capacitance measurements
Title Defect states characterization of non-annealed and annealed Zr2/InAlN/GaN structures by capacitance measurements Author Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Carlin J.-F. Grandjean N. Source document Applied Physics Letters. Vol. 102, (2013), 063502 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations LIU, X. - KIM, J. - SUNTRUP, D. J. - WIENECKE, S. - TAHHAN, M. - YELURI, R. - CHAN, S. H. - LU, J. - LI, H. - KELLER, S. - MISHRA, U. K. In APPLIED PHYSICS LETTERS. JUN 30 2014, vol. 104, no. 26. AKAZAWA, M. - SEINO, A. In PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. AUG 2017, vol. 254, no. 8. AKAZAWA, Masamichi - KITAJIMA, Shouhei. Control of plasma-CVD SiO2/InAlN interface by ultrathin atomic-layer-deposited Al2O3 interlayer. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, 2019, vol. 58, no., pp.SIIB06 AKAZAWA, Masamichi - KITAJIMA, Shouhei - KITAWAKI, Yuya. Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, 2019, vol. 58, no. 10, pp.106504 CUI, P. - ZHANG, J. - JIA, M. - LIN, G.Y. - WEI, L.C. - ZHAO, H.C. - GUNDLACH, L. - ZENG, Y.P. InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, FEB 1 2020, vol. 59, no. 2. BORDOLOI, Sushanta - RAY, Ashok - TRIVEDI, Gaurav. Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification. In IEEE ACCESS, 2021, vol. 9, no., pp. 99828-99841. ISSN 2169-3536. Dostupné na: https://doi.org/10.1109/ACCESS.2021.3096988. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2013 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1063/1.4792060 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2013 2012 3.794 Q1 2.570 Q1
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