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Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

  1. TitleSchottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region
    Author Jurkovič Michal SAVELEK - Elektrotechnický ústav SAV
    Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Palankovski V.

    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV

    Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV

    Čičo Karol SAVELEK - Elektrotechnický ústav SAV

    Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Carlin J.-F.

    Grandjean N.

    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Source document IEEE Electron Device Letters. Vol. 34, (2013), p. 432-434
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
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    CHANDER, S. - AJAY - NIRMAL, D. - GUPTA, M. In 2017 INTERNATIONAL CONFERENCE ON INNOVATIONS IN ELECTRICAL, ELECTRONICS, INSTRUMENTATION AND MEDIA TECHNOLOGY (ICIEEIMT). 2017, p. 293-296.
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    GUPTA, Suraj - MISHRA, S. N. - JENA, K. DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT. In International Conference on Signal Processing, Communication, Power and Embedded System, SCOPES 2016 Proceedings, 2017-06-22, pp. 1777-1780.
    CHEN, P.G. - CHEN, K.T. - TANG, M. - WANG, Z.Y. - CHOU, Y.C. - LEE, M.H. Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. In SENSORS. SEP 2018, vol. 18, no. 9.
    WEI, L.C. - WANG, Q. - FENG, C. - XIAO, H.L. - JIANG, L.J. - WANG, C.M. - LI, W. - WANG, X.L. - LIU, F.Q. - XU, X.G. - WANG, Z.G. Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer. In JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. NOV 2018, vol. 18, no. 11, p. 7400-7404.
    SMITH, M.D. - LI, X. - UREN, M.J. - THAYNE, I.G. - KUBALL, M. Polarity dependence in Cl-2-based plasma etching of GaN, AlGaN and AlN. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, AUG 15 2020, vol. 521.
    JIANG, Yang - DU, Fangzhou - QIAO, Zepeng - CHENG, Wei Chih - HE, Jiaqi - TANG, Xinyi - LIU, Feifei - WEN, Lei - WANG, Qing - YU, Hongyu. InAlN/GaN HEMTs on Si with 0.18-Ω•mm Contact Resistance and 2.1-A/mm Drain Current Density. In Proceedings of International Conference on ASIC. ISSN 21627541, 2021-01-01, pp. Dostupné na: https://doi.org/10.1109/ASICON52560.2021.9620249.
    TOPRAK, A. - YILMAZ, D. - OZBAY, E. Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology. In MATERIALS RESEARCH EXPRESS. DEC 2021, vol. 8, no. 12.
    SARKAR, S. - KHADE, R.P. - DASGUPTA, A. - DASGUPTA, N. Effect of GaN cap layer on the performance of AlInN/GaN-based HEMTs. In MICROELECTRONIC ENGINEERING. ISSN 0167-9317, APR 1 2022, vol. 258. Dostupné na: https://doi.org/10.1016/j.mee.2022.111756.
    SINGH, J. - VERMA, A. - TEWARI, V.K. - SINGH, S. Design and Parametric Analysis of GaN on Silicon High Electron Mobility Transistor for RF Performance Enhancement. In SILICON. ISSN 1876-990X, JUL 2022, vol. 14, no. 11, p. 6311-6319. Dostupné na: https://doi.org/10.1007/s12633-021-01419-3.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2013
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1109/LED.2013.2241388
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201320122.789Q11.998Q1
Number of the records: 1  

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