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GaAs mesh type transmission photocathode prepared by inductively oupled plasma CCl2F2 etching of GaAs substrate

  1. TitleGaAs mesh type transmission photocathode prepared by inductively oupled plasma CCl2F2 etching of GaAs substrate
    Author Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Balalykin Nikolay I.

    Hotový I.

    Šoltýs Ján 1977 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Feshchenko A.A.

    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV

    Source document Proceedings of ADEPT : 1st International Conference on Advances in Electronic and Photonic Technologies. P. 233-236. - Žilina : University of Žilina, 2013 / Pudiš D. ; Lettrichová I. ; Šušlik Ľ. ; Kováč Jaroslav Jr. ; Vincze A.
    Languageeng - English
    Document kindrozpis článkov z periodík (rzb)
    CategoryAFD - Published papers from domestic scientific conferences
    Year2013
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2013
Number of the records: 1  

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