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Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs
Title Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs Author Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Šichman Peter SAVELEK - Elektrotechnický ústav SAV Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV ORCID Seifertová Alena 1958 SAVELEK - Elektrotechnický ústav SAV Dérer Ján 1948 SAVELEK - Elektrotechnický ústav SAV Brunner F. Würfl H.-J. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Physica Status Solidi A : applications and materials science. Vol. 214 (2017), no. 1700407 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations TAPAJNA, M. Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications. In CRYSTALS. ISSN 2073-4352, DEC 2020, vol. 10, no. 12. TOKUDA, H. - ASUBAR, J.T. - KUZUHARA, M. Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, AUG 1 2020, vol. 59, no. 8. BISWAS, D. - TSUBOI, T. - EGAWA, T. GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs). In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, NOV 15 2021, vol. 135. LI, J.L. - YIN, Y. - ZENG, N. - LIAO, F.B. - LIAN, M.X. - ZHANG, X.C. - ZHANG, K.M. - LI, J.B. Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate. In SUPERLATTICES AND MICROSTRUCTURES. ISSN 0749-6036, JAN 2022, vol. 161. Dostupné na: https://doi.org/10.1016/j.spmi.2021.107064. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2017 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1002/pssa.201700407 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2017 2016 1.775 Q2 0.694 Q1
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