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Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD
Title Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD Author Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Chauvat M.-P. Minj A. Gucmann Filip 1987 ORCID Vančo L. Kováč Jaroslav Jr. Kret S. Ruterana P. Kuball M. Šiffalovič Peter 1975 SAVFYZIK - Fyzikálny ústav SAV ORCID Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Journal of Applied Physics. Vol. 125, no. 10 (2019), 105304 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations BISWAS, Debaleen - FUJITA, Hirotaka - TORII, Naoki - EGAWA, Takashi. Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, 2019, vol. 125, no. 22, pp. TOPRAK, A. - YILMAZ, D. - OZBAY, E. Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology. In MATERIALS RESEARCH EXPRESS. DEC 2021, vol. 8, no. 12, 126302. WANG, Xianbin - GAO, Yanyan - ZHOU, Shufen. Theoretical Analysis of Material Mechanism and Device Characteristics in N-Polar GaN/Ininf0.17/infAlinf0.83/infN High Electron Mobility Transistor. In Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2022-02-01, 42, 2, pp. 151-158. ISSN 16727126. Dostupné na: https://doi.org/10.13922/j.cnki.cjvst.202106008. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2019 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1063/1.5079756 
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File name Access Size Downloaded Type License Evidence of relationship between strain and In.pdf Neprístupný/archív 2.3 MB 0 Publisher's version Evidence of relationship between strain and In-incorporation growth of N-polar In-rich InAlN buffer layer by OMCVD.pdf available 1.6 MB 11 Postprint rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2019 2018 2.328 Q2 0.746 Q2
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