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Application of the gradient theory to interface crack between two dissimilar dielectric materials

  1. TitleApplication of the gradient theory to interface crack between two dissimilar dielectric materials
    Author Sládek Ján SAVSTAV - Ústav stavebníctva a architektúry SAV    RID    ORCID
    Co-authors Sládek Vladimír SAVSTAV - Ústav stavebníctva a architektúry SAV

    Hrytsyna Maryan SAVSTAV - Ústav stavebníctva a architektúry SAV

    Profant Tomáš SAVSTAV - Ústav stavebníctva a architektúry SAV

    Source document Engineering Fracture Mechanics. Vol. 276 (2022), art. no. 108895
    Languageeng - English
    CountryGB - Great Britian
    Document kindrozpis článkov z periodík (rbx)
    CitationsXIE, X.H. - FENG, Q.K. - ZHANG, M. - LIAO, N.B. Evaluating fracture properties and interfacial strengths of silicon oxycarbide thin-films: XFEM simulations and experimental validation. In ENGINEERING FRACTURE MECHANICS. ISSN 0013-7944, NOV 15 2023, vol. 292, art. no. 109648. Dostupné na: https://doi.org/10.1016/j.engfracmech.2023.109648.
    DENG, Feng - YU, Wenshan - LIANG, Xu - SHEN, Shengping. A mixed finite element method for large deformation of flexoelectric materials. In APPLIED MATHEMATICAL MODELLING, 2023, vol. 118, pp. 303-321. ISSN 0307-904X. Dostupné na: https://doi.org/10.1016/j.apm.2023.01.029.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2022
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1016/j.engfracmech.2022.108895
    article

    article

    File nameAccessSizeDownloadedTypeLicense
    Application of the gradient theory to interface crack between two dissimilar dielectric materials.pdfNeprístupný/archív5 MB1Publisher's version
    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    202220214.898Q11.252Q1
Number of the records: 1  

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