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Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces

  1. TitleInfluence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces
    Author Pinčík Emil 1956 SAVFYZIK - Fyzikálny ústav SAV    ORCID
    Co-authors Jergel Matej 1954- SAVFYZIK - Fyzikálny ústav SAV    SCOPUS    RID    ORCID

    Kučera Michal 1956 SAVELEK - Elektrotechnický ústav SAV    ORCID

    van Swaaij R.A.C.M.M.

    Ivančo Ján 1959 SAVFYZIK - Fyzikálny ústav SAV    SCOPUS    RID    ORCID

    Senderák Rudolf 1953 SAVFYZIK - Fyzikálny ústav SAV

    Müllerová J.

    Brunel M.

    Co-authors Zeman Milan
    Source document Applied Surface Science. Vol. 166 (2000), p. 72-76
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsAvakyants, L.P., Bokov, P.Yu., Grigoriev, A.T., Chervyakov, A.V. Bulletin of the Russian Academy of Sciences: Physics 72 (2008), pp. 941-943
    VILLADA, J.A. - JIMENEZ-SANDOVAL, S. - LOPEZ-LOPEZ, M. - BANOS, L. - RODRIGUEZ-GARCIA, M.E. Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs. In PHYSICA B, 2010, vol. 405, no. 9, p. 2185-2188.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2000
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    200019991.190
Number of the records: 1  

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