Number of the records: 1
Metal oxide gate electrodes for advanced CMOS technology
Title Metal oxide gate electrodes for advanced CMOS technology Author Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Öszi Zsolt SAVELEK - Elektrotechnický ústav SAV Hooker J.C. Fanciulli M. Wiemer C. Dimoulas A. Vellianitis G. Roozeboom F. Source document Annalen der Physik. Vol. 13 (2004), p. 31 Language eng - English Country DE - Germany Document kind rozpis článkov z periodík (rbx) Citations Li, Z Schram, T Pantisano, L Conard, T Van Elshocht, S Deweerd, W De Gendt, S De Meyer, K Stesmans, A Shamuilia, S Afanas'ev, VV Akheyar, A Brunco, DP Yamada, N Lehnen, P JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, FEB 1 2007, vol. 101, no. 3. LI, Q. - WANG, S.J. - LI, K.B. - HUAN, A.C.H. - CHAI, J.W. - PAN, J.S. - ONG, C.K. APPLIED PHYSICS LETTERS. ISSN 0003-6951, DEC 20 2004, vol. 85, no. 25, p. 6155-6157. KIM, Hyun Min - LEE, Jong Hoon - YOM, Ahram - LEE, Han Sol - KIM, Dong Geun - KO, Dong Wan - KIM, Hong Seung - AHN, Ji-Hoon. Low-resistivity SrRuO3 thin films formed on SiO2 substrates without buffer layer by RF magnetron sputtering. In JOURNAL OF ALLOYS AND COMPOUNDS, 2021, vol. 857, no., pp. ISSN 0925-8388. Dostupné na: https://doi.org/10.1016/j.jallcom.2020.157627. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2004 
article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2004
Number of the records: 1