Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study

Number of the records: 1

Title	Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study
Author	Harmatha L.
Co-authors	Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Slugeň V.
	Ballo P.
	Písečný Pavol SAVINFO - Ústav informatiky SAV
	Šik J.
	Kögel G.

Source document	Microelectronics Journal. Vol. 37 (2006), p. 283
Language	eng - English
Country	NL - Netherlands
Document kind	rozpis článkov z periodík (rbx)
Citations	COLEMAN, P. G. Defect profiles in semiconductor structures. In PHYSICA STATUS SOLIDI C CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 10, 2007, vol. 4, no. 10, pp. 3620-3626. ISSN 1862-6351. Dostupné na: https://doi.org/10.1002/pssc.200675750.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2006
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1016/j.mejo.2005.04.059

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2006	2005	0.350	Q3

Number of the records: 1