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High frequency characterization and properties of AlGaN/GaN HEMT structures
Title High frequency characterization and properties of AlGaN/GaN HEMT structures Author Tomáška M. Co-authors Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Mišun M. Source document ASDAM 2008. P. 331-334 : conference proceedings. - Piscataway, NJ : Institute of Electrical and Electronics Engineers, 2008 / Haščík Štefan 1956 ; Osvald Jozef 1953 ; International Conference on Advanced Semiconductor Devices and Microsystems Language eng - English Country US - United States of America Document kind rozpis článkov z periodík (rzb) Citations JIANG, C.Y. - LIU, T. - DU, C.H. - HUANG, X. - LIU, M.M. - ZHAO, Z.F. - LI, L.X. - PU, X. - ZHAI, J.Y. - HU, W.G. - WANG, Z.L. In NANOTECHNOLOGY. NOV 10 2017, vol. 28, no. 45. Category AEC - Scientific papers in foreign peer-reviewed proceedings, monographs Category of document (from 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Type of document príspevok Year 2008 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2008
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