On determination of properties of ultrathin and very thin silicon oxide layers by FTIR and X-ray reflectivity

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Title	On determination of properties of ultrathin and very thin silicon oxide layers by FTIR and X-ray reflectivity
Author	Kopáni M.
Co-authors	Jergel Matej 1954- SAVFYZIK - Fyzikálny ústav SAV ^SCOPUS ^RID ^ORCID
	Mikula M.
	Jurečka S.
	Pinčík Emil 1956 SAVFYZIK - Fyzikálny ústav SAV ^ORCID

Co-authors	Kobayashi H. Takahashi M. Imamura K.
Source document	Materials Research Society Symposium Proceedings : MRS Proceedings, Vol. 1066 . p. 199-204. - Warrendale : Materials Research Society, 2008
Language	eng - English
Country	US - United States of America
Document kind	rozpis článkov z periodík (rzb)
Citations	KULSHRESHTHA, P. K. - YOON, YoHan - YOUSSEF, K. M. - GOOD, E. A. - ROZGONYI, G. Oxygen Precipitation Related Stress-Modified Crack Propagation in High Growth Rate Czochralski Silicon Wafers. In JOURNAL OF THE ELECTROCHEMICAL SOCIETY. ISSN 0013-4651, 2012, vol. 159, no. 2, pp. H125.
Category	AFC - Published papers from foreign scientific conferences
Year	2008

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Number of the records: 1