Photocurrent spectroscopy of semi-insulating GaAS with a new contact metallization: indication of 2DEG formed at the M-S interface

Number of the records: 1

Title	Photocurrent spectroscopy of semi-insulating GaAS with a new contact metallization: indication of 2DEG formed at the M-S interface
Author	Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV
Co-authors	Kováč Ján
	Mudroň J.
	Hubík P.
	Dubecký Matúš SAVFYZIK - Fyzikálny ústav SAV
	Gombia E.

Source document	/ Vajda J. ; Weiss M. APCOM 2010 : proceedings of the 16th International Conference on Applied Physics of Condensed matter. P. 29-32. - Bratislava : Slovenská technická univerzita v Bratislave, 2010 ; International Conference on Applied Physics of Condensed Matter APCOM 2010
Language	eng - English
Country	SK - Slovak Republic
Document kind	rozpis článkov z periodík (rzb)
Category	AED - Scientific papers in domestic peer-reviewed proceedings, monographs
Category of document (from 2022)	V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
Type of document	príspevok
Year	2010

article

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2010

Number of the records: 1