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Amorphous silicon carbide films wit wide range of phosphorus concentration: Structural and electrical properties

  1. TitleAmorphous silicon carbide films wit wide range of phosphorus concentration: Structural and electrical properties
    Author Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV

    Sasinková Vlasta 1954- SAVCHEM - Chemický ústav SAV

    Kleinová Angela 1960- SAVPOLYM - Ústav polymérov SAV    ORCID

    Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV

    Sekáčová Mária 1955 SAVELEK - Elektrotechnický ústav SAV

    Arbet Juraj 1959 SAVELEK - Elektrotechnický ústav SAV

    Co-authors Kobzev A.P.
    Source document Proceedings of ADEPT 6th International Conference on Advances in Electronic and Photonic Technologies, Tatranská Lomnica, High Tatras, Slovakia, June 18-21, 2018. P. 216-219. - Bratislava : Institute of Electronics and Photonics, FEI STU in Bratislava, 2018 / Nevrela J. ; Micjan M. ; Novota M. ; Kováč J. jr.
    Languageeng - English
    Document kindrozpis článkov z periodík (rzb)
    CategoryAFD - Published papers from domestic scientific conferences
    Year2018
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2018
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