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Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure
Title Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure Author Šichman Peter SAVELEK - Elektrotechnický ústav SAV Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Priesol J. Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV ORCID Vincze A. Chvála A. Marek J. Šatka A. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Materials science in semiconductor processing. Vol. 118 (2020), no. 105203 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations PAN, Y. Influence of N-vacancy on the electronic and optical properties of bulk GaN from first-principles investigations. In INTERNATIONAL JOURNAL OF ENERGY RESEARCH. ISSN 0363-907X, AUG 2021, vol. 45, no. 10, p. 15512-15520. MOCHIZUKI, K. - HORIKIRI, F. - OHTA, H. - MISHIMA, T. Step-edge segregation model for step-velocity dependences of carbon and oxygen concentrations in GaN layers grown on m-plane GaN. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JAN 1 2021, vol. 60, no. 1. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2020 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/j.mssp.2020.105203 
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File name Access Size Downloaded Type License Semi-insulating GaN for vertical structures role of substrate selection and growth.pdf available 1.4 MB 8 Author's preprint Semi-insulating GaN for vertical.pdf Neprístupný/archív 1.2 MB 1 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2020 2019 3.085 Q2 0.665 Q1
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