Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors

Number of the records: 1

Title	Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
Author	Matys M.
Co-authors	Nishiguchi K.
	Adamowicz J.B.
	Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Hashizume T.

Source document	Journal of Applied Physics. Vol. 124 (2018), no. 224502
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	MAZUMDER, S. - WU, Z.G. - PAN, P.C. - LI, S.H. - WANG, Y.H. DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, SEP 2021, vol. 36, no. 9.
	GLINKOWSKI, M. - PASZKIEWICZ, B. - PASZKIEWICZ, R. Influence of High Electric Field on Operation of AlGaN/AlN/GaN High Electron Mobility Transistor. In ACTA PHYSICA POLONICA A. ISSN 0587-4246, AUG 2021, vol. 140, no. 2, p. 192-196.
	SON, D.H. - THINGUJAM, T. - DAI, Q. - KIM, J.G. - CRISTOLOVEANU, S. - LEE, J.H. Fabrication and characterization of GaN-based nanostructure field effect transistors. In SOLID-STATE ELECTRONICS. ISSN 0038-1101, OCT 2021, vol. 184.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2018
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1063/1.5056194

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2018	2017	2.176	Q2	0.739	Q2

Number of the records: 1