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Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
Title Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors Author Matys M. Co-authors Nishiguchi K. Adamowicz J.B. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Hashizume T. Source document Journal of Applied Physics. Vol. 124 (2018), no. 224502 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations MAZUMDER, S. - WU, Z.G. - PAN, P.C. - LI, S.H. - WANG, Y.H. DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, SEP 2021, vol. 36, no. 9. GLINKOWSKI, M. - PASZKIEWICZ, B. - PASZKIEWICZ, R. Influence of High Electric Field on Operation of AlGaN/AlN/GaN High Electron Mobility Transistor. In ACTA PHYSICA POLONICA A. ISSN 0587-4246, AUG 2021, vol. 140, no. 2, p. 192-196. SON, D.H. - THINGUJAM, T. - DAI, Q. - KIM, J.G. - CRISTOLOVEANU, S. - LEE, J.H. Fabrication and characterization of GaN-based nanostructure field effect transistors. In SOLID-STATE ELECTRONICS. ISSN 0038-1101, OCT 2021, vol. 184. WANG, A.S. - ZENG, L.Y. - WANG, W. Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 1 2023, vol. 38, no. 3. Dostupné na: https://doi.org/10.1088/1361-6641/acb8d4. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2018 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1063/1.5056194 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 2.176 Q2 0.739 Q2
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