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Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Title Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements Author Mikulics M. Co-authors Hartdegen H. Winden A. Fox A. Marso M. Sofer Z. Luth H. Grützmacher D. Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Source document Physica status solidi C. Current topics in solid state physics. Vol. 9, (2012), p. 911-914 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations YUAN, J.L. - GAO, X.M. - YANG, Y.C. - ZHU, G.X. - YUAN, W. - CHOI, H.W. - ZHANG, Z.Y. - WANG, Y.J. GaN directional couplers for on-chip optical interconnect. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. APR 2017, vol. 32, no. 4. JIA, J.J. - LIN, C.C. - LEE, C.T. Scaling Effect in Gate-Recessed AlGaN/GaN Fin-Nanochannel Array MOSHEMTs. In IEEE ACCESS. ISSN 2169-3536, 2020, vol. 8, p. 158941-158946. ZHANG, Jie - ZHENG, Fuzhong - DU, Junjie - LU, Yuting - LI, Zhonghao - WU, Ying. Research on SWCNT non-contact strain sensor based on photoluminescence principle. In 2023 4th International Seminar on Artificial Intelligence, Networking and Information Technology, AINIT 2023, 2023-01-01, pp. 771-775. Dostupné na: https://doi.org/10.1109/AINIT59027.2023.10212479. Category ADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2012 Registered in WOS Registered in SCOPUS DOI 10.1002/pssc.201100408 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore N rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 0.453 Q3
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