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InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region
Title InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region Author Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Tóth L. Pohorelec Ondrej SAVELEK - Elektrotechnický ústav SAV Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Cora Ildikó Fogarassy Zsolt Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Seifertová Alena 1958 SAVELEK - Elektrotechnický ústav SAV Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV ORCID Oyobiki T. Pécz B. Hashizume T. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Japanese Journal of Applied Physics. Vol. 58 (2019), no. SCCCD21 Language eng - English URL URL link Document kind rozpis článkov z periodík (rbx) Citations BISWAS, D. - TSUBOI, T. - EGAWA, T. GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs). In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, NOV 15 2021, vol. 135. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2019 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.7567/1347-4065/ab06b8 
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File name Access Size Downloaded Type License InGaN (GaN) AlGaN GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region.pdf Neprístupný/archív 855.4 KB 0 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2019 2018 1.471 Q3 0.471 Q1
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