Number of the records: 1  

Optimization of mask material for deep reactive ion etching of GaAs structures

  1. TitleOptimization of mask material for deep reactive ion etching of GaAs structures
    Author Izsák Tibor SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV

    Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV

    Zehetner J.

    Vojs M.

    Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Source document Proceedings of ADEPT 2021 : 10th International Conference on Advances in Electronic and Photonic Technologies, Tatranská Lomnica, High Tatras, Slovakia. P. 169-172. - Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2022 / Feiler M. ; Ziman M. ; Kováčová S. ; Kováč Jaroslav Jr.
    Languageeng - English
    CountrySK - Slovak Republic
    Document kindrozpis článkov z periodík (rzb)
    CategoryAFD - Published papers from domestic scientific conferences
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok z podujatia
    Year2022
    article

    article

    File nameAccessSizeDownloadedTypeLicense
    Optimization of mask material for deep reactive ion etching of GaAs structures.pdfavailable511.6 KB2Publisher's version
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2022
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.