In(Ga)N 3D growth on GaN-buffered on-axis and off-axis (0001) sapphire substrates by MOCVD

Number of the records: 1

Title	In(Ga)N 3D growth on GaN-buffered on-axis and off-axis (0001) sapphire substrates by MOCVD
Author	Rosová Alica 1962 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Co-authors	Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV
	Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Kučera Michal 1956 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ^ORCID

Source document	Nanomaterials-Basel. Vol. 12 (2022), no. 3496
Language	eng - English
Country	CH - Switzerland
Document kind	rozpis článkov z periodík (rbx)
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2022
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.3390/nano12193496

article

	File name	Access	Size	Downloaded	Type	License
	In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD.pdf	available	5.4 MB	5	Publisher's version

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2022	2021	5.719	Q1	0.839	Q1

Number of the records: 1